Syllabus Index and Coverage¶

Codes shown in backticks, such as AExE0101 and AEiE0601, are the official NEC syllabus identifiers. They are retained only to map each note to its source topic.

Status key¶

Progress¶

• Verified subchapters: 6 / 60
• Drafted subchapters: 60 / 60
• Modules 1-9 with syllabus-atom and assigned-question passes: 9 / 9
• Assigned questions mapped to deciding facts for Modules 1-9: 90 / 90
• Independently verified chapter: 01 - Basic Electrical and Electronics
• Chapters 2-9 remain DRAFT until their source-by-source technical audits are complete.
• Chapter 10 is outside the current completion scope and remains DRAFT.

Syllabus coverage¶

Chapter 1 atomic coverage¶

AExE0101 Basic concept¶

• Ohm's law and its validity condition
• Charge, current, voltage, power, and energy
• Conductors and insulators
• Series and parallel circuits
• Star-delta and delta-star conversion
• Kirchhoff's current and voltage laws
• Nodal versus mesh recognition
• Linear versus nonlinear circuits
• Bilateral versus unilateral circuits
• Active versus passive circuits and devices

AExE0102 Network theorems¶

• Superposition and source deactivation
• Thevenin equivalent
• Norton equivalent
• Thevenin-Norton conversion
• Maximum power transfer and efficiency caveat
• RC and RL first-order transients
• RLC impedance and phase
• Series and parallel resonance
• Active, reactive, and apparent power
• Power factor and the power triangle

AExE0103 Alternating-current fundamentals¶

• AC generation and sinusoidal equation
• Frequency, period, angular frequency, and phase
• Peak, peak-to-peak, full-cycle average, and rectified average
• RMS definition and sinusoidal value
• Peak factor and form factor
• Nepal nominal grid frequency
• Balanced three-phase generation
• Star and delta line/phase relationships
• Balanced three-phase power

AExE0104 Semiconductor devices¶

• PN diode operation and V-I characteristic
• Forward drop and breakdown caveats
• BJT regions and configurations
• Bias and quiescent point
• Small-signal versus large-signal model
• Enhancement and depletion MOSFETs
• MOSFET cutoff, triode, and saturation regions
• MOSFET versus CMOS
• CMOS inverter and static/dynamic power distinction

AExE0105 Signal generator¶

• Oscillator feedback principle
• Barkhausen sustained/startup distinction
• RC phase-shift oscillator
• Wien bridge oscillator
• Hartley and Colpitts LC oscillators
• Crystal oscillator and quality factor
• Sinusoidal versus relaxation oscillators
• Square, triangle, and sawtooth generation

AExE0106 Amplifiers¶

• Output-stage purpose and classification
• Class A, B, and AB conduction and bias
• Efficiency limits with topology caveats
• Crossover distortion and Class AB bias
• Power BJT ratings and thermal concerns
• Push-pull operation
• Transformer-coupled push-pull stages
• Tuned amplifiers
• Ideal and practical op-amp properties
• Inverting, noninverting, follower, and comparator recognition

Model-set traceability¶

The Chapter 1 note supports the knowledge tested by:

set1-001 through set1-006, and set1-061 through set1-064.

Question wording and answer keys remain diagnostic evidence, not technical sources.